Grupo: Nanoelectrónica (TIC216)
https://hdl.handle.net/10481/47632
2024-03-29T16:03:19ZPerformance of FDSOI double-gate dual-doped reconfigurable FETs
https://hdl.handle.net/10481/75684
Performance of FDSOI double-gate dual-doped reconfigurable FETs
Navarro Moral, Carlos; Donetti, Luca; Padilla De la Torre, José Luis; Medina Bailón, Cristina; Ávila Gómez, Jorge Pablo; Galdón Gil, José Carlos; Recio Muñoz, María Isabel; Márquez González, Carlos; Sampedro Matarín, Carlos; Gámiz Pérez, Francisco Jesús
In this work, the electrical performance of a novel reprogrammable FDSOI device with dual-doping at source/
drain and only two top gates is investigated through advanced 3D TCAD simulations. The static and dynamic
operations are evaluated and compared with those of traditional Schottky barrier RFETs and standard 28 nm
FDSOI MOS transistors under manufacturable geometries.
Impact of non uniform strain configuration on transport properties for FD14+ devices
https://hdl.handle.net/10481/69444
Impact of non uniform strain configuration on transport properties for FD14+ devices
Medina Bailón, Cristina; Sampedro Matarín, Carlos; Gámiz Pérez, Francisco Jesús; Godoy Medina, Andrés; Donetti, Luca
As device dimensions are scaled down, the use of non-geometrical performance boosters becomes of special relevance. In this sense, strained channels are proposed for the 14 nm FDSOI node. However this option may introduce a new source of variability since strain distribution inside the channel is not uniform at such scales. In this work, a MS-EMC study of different strain configurations including non-uniformities is presented showing drain current degradation because of the increase of intervalley phonon scattering and the subsequent variations of transport effective mass and drift velocity. This effect, which has an intrinsic statistical origin, will make necessary further optimizations to keep the expected boosting capabilities of strained channels.
Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices
https://hdl.handle.net/10481/69443
Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices
Medina Bailón, Cristina; Padilla De la Torre, José Luis; Sadi, Toufik; Sampedro Matarín, Carlos; Godoy Medina, Andrés; Donetti, Luca; Georgiev, Vihar; Gámiz Pérez, Francisco Jesús; Asenov, Asen
Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, therefore advanced device simulators need to include them in an appropriate way. This work presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLM) accounting for both direct and trap assisted tunneling, and non-local band–to–band tunneling (BTBT) phenomena in a Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled FDSOI, DGSOI, and FinFET devices. We find that S/D tunneling is the prevalent phenomena for the three devices, and it is increasingly relevant for short channel lengths.
Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo
https://hdl.handle.net/10481/69441
Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo
Medina Bailón, Cristina; Padilla De la Torre, José Luis; Sampedro Matarín, Carlos; Godoy Medina, Andrés; Donetti, Luca; Gámiz Pérez, Francisco Jesús
The inclusion of quantum effects in the transport direction plays an important role in the extensive research of ultrascaled electronic devices. In this context, it is necessary to study how these phenomena affect different technological architectures in order to conclude which one can be the best candidate to replace standard technology. This work presents the implementation of direct Source-to-Drain Tunneling effect (S/D tunneling) in a Multi-Subband Ensemble Monte Carlo (MSEMC) simulator showing its influence in different structures such as FDSOI, DGSOI and FinFET devices. The differences in the potential profile and the electron distribution in the subbands for these architectures modify the number of electrons affected by this quantum mechanism and, therefore, their short channel behavior.
Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs
https://hdl.handle.net/10481/69440
Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs
Medina Bailón, Cristina; Padilla De la Torre, José Luis; Sampedro Matarín, Carlos; Alper, C; Gámiz Pérez, Francisco Jesús; Ionescu, Adrian Mihai
TFETs are in the way to become an alternative to conventional MOSFETs due to the possibility of achieving low subthreshold swing (SS) combined with small OFF current levels which allows operation at low VDD. In this work, a non-local band–to–band tunneling (BTBT) model has been successfully implemented into a Multi-Subband Ensemble Monte Carlo (MSEMC) simulator and applied to ultra-scaled silicon-based n-type TFETs. We have considered two different criteria for the choice of the tunneling path followed by the carriers when crossing the potential barrier, which leads to different distributions of the generated electron-hole pairs. Subband discretization due to field–induced quantum confinement has been taken into account. TCAD simulations accounting for quantization effects are considered for comparison purposes providing very accurate agreement with MS-EMC results.