DETC - Comunicaciones Congresos, Conferencias, ...https://hdl.handle.net/10481/141792026-04-20T13:26:39Z2026-04-20T13:26:39ZFlexible Laser-Induced Graphene Memristor: Fabrication and SPICE based Emulation of an Artificial Neural NetworkGarcía Palomo, MikelGaneriwala, Mohit DineshkumarFernández-Sánchez, María del CarmenMotos-Espada, RobertoGonzález Marín, EnriqueRuiz, Francisco G.Godoy Medina, Andréshttps://hdl.handle.net/10481/910762024-04-23T10:12:27ZFlexible Laser-Induced Graphene Memristor: Fabrication and SPICE based Emulation of an Artificial Neural Network
García Palomo, Mikel; Ganeriwala, Mohit Dineshkumar; Fernández-Sánchez, María del Carmen; Motos-Espada, Roberto; González Marín, Enrique; Ruiz, Francisco G.; Godoy Medina, Andrés
This work demonstrates laser-induced graphene
memristors, fabricated using a patterning-free, low cost and
simple process directly on a flexible polyimide substrate. The
fabricated memristors show repeatable non-volatile bipolar resistive switching with state retention up to 103 seconds. A simple
perceptron network for the classification of black-and-white
images is later implemented using an experimentally extracted
compact model. Successful training of the network by integrating
SPICE model with MATLAB shows the possibility to emulate
the on-chip learning process. Further, by properly modulating
the applied voltage pulse amplitude and period, a reduction in
the energy consumed by training the neural network is achieved.
Project PID2020-116518GB-I00 funded by MCIN/AEI/10.13039/501100011033; and TED2021-129769B-I00 FlexPowHar and CNS2023-143727 RECAMBIO both funded by MCIN/AEI/10.13039/501100011033 and the European Union NextGenerationEU/PRTR. This work also acknowledges the research project P21 00149 ENERGHENE funded by the University, Research and Innovation Council of the Board of Andalusia. M. D. Ganeriwala ac- knowledges funding from the European Union's Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant agreement No. 101032701.
Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memoriesCuesta-López, JuanMarín, Enrique G.Toral López, AlejandroGaneriwala, Mohit DineshkumarRuiz, Francisco G.Pasadas Cantos, FranciscoGodoy Medina, Andréshttps://hdl.handle.net/10481/910502024-04-23T08:04:53ZVolatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories
Cuesta-López, Juan; Marín, Enrique G.; Toral López, Alejandro; Ganeriwala, Mohit Dineshkumar; Ruiz, Francisco G.; Pasadas Cantos, Francisco; Godoy Medina, Andrés
We simulate voltage-driven ion migration in gate oxides
as a potential mechanism to develop non-volatile
memories (NVMs) as appropriate candidates for
neuromorphic computing applications. Our study aims to
give insights about the impact of ion mobility and ion
concentration in the device memory window (MW).
This work is funded by the FEDER/Junta de Andalucía
through the projects A-TIC-646-UGR20 and P20-00633,
and the Spanish Government
MCIN/AEI/10.13039/501100011033 through the
projects PID2020-116518GB-I00 and TED2021-129769B-I00 (NextGenerationEU/PRTR). F. Pasadas
acknowledges funding from PAIDI 2020 and the
European Social Fund Operational Programme 2014–2020 no. 20804. J. Cuesta-Lopez acknowledges the FPU
program FPU019/05132, and M.D. Ganeriwala the EU
through project H2020-MSCA-IF 2020.
Physics-based scalable compact model for terminal charge, intrinsic capacitance and drain current in nanosheet FETsSingh, AishwaryaGaneriwala, Mohit DineshkumarMohapatra, Niharhttps://hdl.handle.net/10481/910372024-04-23T07:11:13ZPhysics-based scalable compact model for terminal charge, intrinsic capacitance and drain current in nanosheet FETs
Singh, Aishwarya; Ganeriwala, Mohit Dineshkumar; Mohapatra, Nihar
This work presents a physics-based SPICE compatible model
for Nanosheet FETs, which provides explicit expressions for
the drain current, terminal charges and intrinsic capacitances.
The drain current model is based on the drift-diffusion formalism for carrier transport. The terminal charge and intrinsic capacitance models are calculated by adopting the Ward–Dutton linear charge partition scheme that guarantees charge
conservation. The model uses the novel bottom-up approach
to calculate the terminal charges, uses very few empirical parameters and is accurate across device dimensions and bias
conditions.
On the improvement of reliability in 2D devices for sensingMárquez González, Carloshttps://hdl.handle.net/10481/797252023-02-07T10:10:53ZOn the improvement of reliability in 2D devices for sensing
Márquez González, Carlos
MSCA contingency plan: the lifeguard during the pandemicMárquez González, Carloshttps://hdl.handle.net/10481/726802022-02-07T07:47:09ZMSCA contingency plan: the lifeguard during the pandemic
Márquez González, Carlos
https://www.mariecuriealumni.eu/newsletters/29th-mcaa-newsletter/rebuilding-bridges-msca-contingency-plan-lifeguard-during-pandemic