@misc{10481/97215,
year = {2020},
month = {1},
url = {https://hdl.handle.net/10481/97215},
abstract = {The search and investigation of resistive switching materials, the most consolidated
form of solid-state memristors, has become one of the fastest growing areas in the
field of electronics. This is not only due to the huge commercial interest in developing
the so-called Resistive Random-Access Memories (ReRAMs) but also because resistive
switching materials are gathering way to new forms of analog computation. Unlike in
the field of traditional electronics technologies, where Silicon has monopolized most
of the applications, the area of solid-state memristors is opened to a broad set of
candidates that may contribute to unprecedented applications. In particular, the use
of organic-based resistive switching materials can provide additional functionalities
as structural flexibility for conformal integration or introduce new and cost-effective
fabrication technologies. Following this new wave of organic memristive materials, this
work aims at reviewing the existing models explaining the origins of resistive switching in
Graphene Oxide, one of the most promising contenders on the battlefield of emerging
memristive materials due to its low cost and easy processing methods. Within this
manuscript, we will revisit the different theories supporting the phenomenology of
resistive switching in this material nourishing the discussion with experimental results
supporting the three main existing theories.},
organization = {Spanish Ministry of Science,
Innovation and Universities/FEDER-EU through the project
TEC2017-89955P and the pre-doctoral grants FPU16/01451,
FPU16/04043},
organization = {Junta de Andalucía/FEDER-EU through the
project B-RNM-375-UGR18},
organization = {KAKENHI through
grant number JP18k04275},
publisher = {Frontiers Media},
keywords = {graphene},
keywords = {graphene oxide},
keywords = {memristor},
title = {Resistive Switching in Graphene Oxide},
doi = {10.3389/fmats.2020.00017},
author = {Romero Maldonado, Francisco Javier and Toral López, Alejandro and Medina Rull, Alberto and Moraila-Martínez, Carmen Lucía and Morales, Diego P. and Ohata, Akiko and Godoy Medina, Andrés and Ruiz, Francisco G. and Rodríguez Santiago, Noel},
}