@misc{10481/96361,
year = {2024},
month = {7},
url = {https://hdl.handle.net/10481/96361},
abstract = {This work presents a 2D tellurium (Te)-based diode that exploits the doping achieved by atomic layer deposited (ALD) Al2O3 to enhance its rectifying performance. The proposed device comprises a Schottky junction that is dielectric-doped to significantly reduce the reverse bias current. A boosted current responsivity four times higher compared to that of undoped devices is achieved, maximizing the performance for radio frequency (RF) power detectors. The application measurement results demonstrate sensitivities as low as −45 dBm, and at −30 dBm RF input power outstanding tangential responsivities up to 6.5 kV W–1, 4.3 kV W–1, and 650 V W–1 at 0.5, 1, and 2.5 GHz, respectively, while reaching linear dynamic range (DR) of over 30 dB. These are the highest reported values for 2D-based material devices by almost two orders of magnitude. Furthermore, the DR is ≈10 dB larger compared to state-of-the-art power detectors based on bulk semiconductors.},
organization = {German Research Foundation (DFG) under the projects GLECS2 (No.
653408), MOSTFLEX (653414)},
organization = {Natural Sciences and Engineering
Research Council of Canada (NSERC) (RGPIN-2017-05810 and ALLRP
577611-22)},
organization = {European Commission under the Horizon 2020
projects Graphene Flagship (No. 785219 and 881603)},
organization = {Research projects TED2021-129938B-I00 FlexPowHar and CNS2023-143727 RECAMBIO both funded by MCIN/AEI/10.13039/501100-011033
and the European Union NextGenerationEU/PRTR},
organization = {R+D+i project A-ING-253-UGR23 AMBITIONS co-financed
by Consejería de Universidad, Investigación e Innovación and the European
Union under the FEDER Andalucía 2021-2027},
organization = {Vanier Canada Graduate Scholarship},
organization = {Simon Fraser University},
publisher = {Wiley-Blackwell Verlag GmbH},
keywords = {2D},
keywords = {Diode},
keywords = {Dielectric},
title = {Dielectric-Doped 2D Tellurium Diodes for Zero-Bias Radio Frequency Power Detection},
doi = {10.1002/aelm.202400210},
author = {Palacios, Paula and Askar, Abdelrahman M. and Pasadas Cantos, Francisco and Saeed, Mohamed and González Marín, Enrique and Adachi, Michael M. and Negra, Renato},
}