@misc{10481/94787,
year = {2024},
month = {9},
url = {https://hdl.handle.net/10481/94787},
abstract = {The drift characteristics of valence change memory (VCM) devices have been analyzed through both
experimental analysis and 3D kinetic Monte Carlo (kMC) simulations. By simulating six distinct low-resistance
states (LRS) over a 24-hour period at room temperature, we aim to assess the device temporal
stability and retention. Our results demonstrate the feasibility of multi-level operation and reveal insights
into the conductive filament (CF) dynamics. The cumulative distribution functions (CDFs) of read-out currents
measured at different time intervals provide a comprehensive view of the device performance for
the different conductance levels. These findings not only enhance the understanding of VCM device
switching behaviour but also allow the development of strategies for improving retention, thereby advancing
the development of reliable nonvolatile resistive switching memory technologies.},
organization = {Federal Ministry of Education and Research of Germany  16ME0092},
organization = {MCIN/AEI/10.13039/501100011033 PID2022-139586NB-C44},
organization = {FEDER, EU},
organization = {EU Horizon Europe programme 871130},
publisher = {Royal Society of Chemistry},
title = {Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO2-based RRAM devices},
doi = {10.1039/d4nr02975e},
author = {Maldonado, David and Roldán Aranda, Juan Bautista},
}