@misc{10481/93093,
year = {2024},
url = {https://hdl.handle.net/10481/93093},
abstract = {III-V compounds have recently attracted high expectation due to their potential to relieve the semiconductor
scaling constraints. Scaled indium gallium arsenide (InGaAs)
transistors have recently proved to operate as single transistor
DRAM exploiting the floating-body effect, enabling getting rid of
the external capacitor and minimizing the cell footprint. However,
extensive characterization of the interface quality and disturbing
mechanisms affecting the device operation are still required.
This work addresses the low frequency noise characterization
of these III-V InGaAs transistors focusing on their DRAM
operation. The experimentally extracted power spectral density
of current follows a flicker-noise characteristic which points to
carrier number fluctuations as the main noise source. However,
mobility degradation associated to trapping-detrapping carrier
phenomena has to be also taken into account to model the device
operation. Finally, the device dimension and the back-gate bias
dependence on the effective trap density have been evaluated.},
organization = {Andalusian University  C-ING-357-UGR23},
organization = {EU FEDER Andalucía 2021-2027},
organization = {MCIN/AEI PID2021−128547OB−I00, PID2020−119668GB−100, PLEC2022-009381},
organization = {European Union NextGeneration EU/PRTR},
organization = {European Project REMINDER 687931},
organization = {MSCA 895322 TRAPS-2D},
publisher = {IEEE},
keywords = {Reliability},
keywords = {Semiconductors},
keywords = {1T-DRAM},
keywords = {III-V materials},
title = {Low-Frequency Noise in InGaAs-OI Transistors},
doi = {10.1109/TED.2024.3392180},
author = {Márquez González, Carlos and Navarro Moral, Carlos and Karg, Siegfried and Ortega López, Rubén and Zota, Cezar and Gámiz Pérez, Francisco Jesús},
}