@misc{10481/92147,
year = {2024},
month = {3},
url = {https://hdl.handle.net/10481/92147},
abstract = {This paper presents the extraction of an equivalent circuit model for PIN diodes and varactors in the millimeter
waves. This circuit model is handy for new communication applications involving, for example, electronic beam
reconfigurability, where diodes are commonly used. For parameter extraction, the proposed model includes
the effects of the device, the pads, and the gap underneath the device. From the measurement at various
bias points (varactor) or states (PIN diode), it is possible to extract an equivalent circuit to properly model
the behavior of these devices when using them to design reconfigurable elements. The results are validated
experimentally, obtaining an excellent agreement between the measurements and the equivalent circuit models
in a large frequency band up to 67 GHz.},
organization = {Grant PID2020-112545RB-C54
funded by MCIN/AEI/10.13039/501100011033 and by the European
Union NextGenerationEU/PRTR},
organization = {Grants
PDC2022-133900-I00, TED2021-129938B-I00, TED2021-131699B-I00,
by Contract SAD 22006912 (SuMeRIO) of Brittany Region},
organization = {Ministerio
de Universidades and the European Union NextGenerationEU,
under Programa Margarita Salas},
organization = {Funding for open access charge:
Universidad de Málaga / CBUA.},
publisher = {Elsevier},
keywords = {Broadband characterization},
keywords = {Equivalent circuit},
keywords = {Millimeter waves},
title = {Broadband parasitic modeling of diodes in the millimeter-wave band},
doi = {10.1016/j.aeue.2024.155216},
author = {Pérez Escribano, Mario and Palomares Caballero, Ángel and Padilla De La Torre, Pablo and Valenzuela Valdes, Juan Francisco and Márquez Segura, Enrique},
}