@misc{10481/91037,
year = {2024},
url = {https://hdl.handle.net/10481/91037},
abstract = {This work presents a physics-based SPICE compatible model
for Nanosheet FETs, which provides explicit expressions for
the drain current, terminal charges and intrinsic capacitances.
The drain current model is based on the drift-diffusion formalism for carrier transport. The terminal charge and intrinsic capacitance models are calculated by adopting the Ward–Dutton linear charge partition scheme that guarantees charge
conservation. The model uses the novel bottom-up approach
to calculate the terminal charges, uses very few empirical parameters and is accurate across device dimensions and bias
conditions.},
keywords = {Terminal charges},
keywords = {Nanosheet FET},
keywords = {Ward-Dutton},
keywords = {Quantum confinement},
keywords = {Bottom-up scalable compact model},
title = {Physics-based scalable compact model for terminal charge, intrinsic capacitance and drain current in nanosheet FETs},
author = {Singh, Aishwarya and Ganeriwala, Mohit Dineshkumar and Mohapatra, Nihar},
}