@misc{10481/85141,
year = {2023},
month = {3},
url = {https://hdl.handle.net/10481/85141},
abstract = {Resistive memories are outstanding electron devices that have displayed a large
potential in a plethora of applications such as nonvolatile data storage, neuromorphic
computing, hardware cryptography, etc. Their fabrication control and
performance have been notably improved in the last few years to cope with the
requirements of massive industrial production. However, the most important
hurdle to progress in their development is the so-called cycle-to-cycle variability,
which is inherently rooted in the resistive switching mechanism behind the
operational principle of these devices. In order to achieve the whole picture,
variability must be assessed from different viewpoints going from the experimental
characterization to the adequation of modeling and simulation techniques.
Herein, special emphasis is put on the modeling part because the accurate
representation of the phenomenon is critical for circuit designers. In this respect,
a number of approaches are used to the date: stochastic, behavioral, mesoscopic...,
each of them covering particular aspects of the electron and ion
transport mechanisms occurring within the switching material. These subjects
are dealt with in this review, with the aim of presenting the most recent
advancements in the treatment of variability in resistive memories.},
organization = {Junta de Andalucia	B-TIC-624-UGR20
PID2021-128077NB-I00},
organization = {European Union (EU)},
organization = {MCIN/AEI/FEDER	A-FQM-66-UGR20
PGC2018-098860-B-I00},
organization = {Spanish Government	RYC2020-030150-I},
organization = {King Abdullah University of Science & Technology},
organization = {Government of the Russian Federation under Megagrant Program	074-02-2018-330 (2)},
organization = {Ministry of Science and Higher Education of the Russian Federation under "Priority-2030" Academic Excellence Program of the Lobachevsky State University of Nizhny Novgorod	N-466-99_2021-2023},
organization = {European project MEMQuD	20FUN06},
organization = {EMPIR programme},
organization = {Horizon 2020},
publisher = {Wiley},
title = {Variability in Resistive Memories},
doi = {10.1002/aisy.202200338},
author = {Roldan, Juan B and Maldonado Correa, David and Jiménez Molinos, Francisco},
}