@misc{10481/83871,
year = {2023},
month = {4},
url = {https://hdl.handle.net/10481/83871},
abstract = {In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin
gate structures fabricated to improve device linearity for Ka-band application are reported. Within
the proposed study of planar, one-etched-fin, four-etched-fin, and nine-etched-fin devices, which
have 50- m, 25- m, 10- m, and 5- m partial gate widths, respectively, the four-etched-fin gate
AlGaN/GaN HEMT devices have demonstrated optimized device linearity with respect to the
extrinsic transconductance (Gm) value, the output third order intercept point (OIP3), and the thirdorder
intermodulation output power (IMD3) level. The IMD3 is improved by 7 dB at 30 GHz for
the 4   50  m HEMT device. The OIP3 is found to reach a maximum value of 36.43 dBm with the
four-etched-fin device, which exhibits high potential for the advancement of wireless power amplifier
components for Ka band applications.},
organization = {Center for the Semiconductor Technology
Research},
organization = {Featured Areas Research Center Program within the framework of the Higher
Education Sprout Project by the Ministry of Education (MOE) in Taiwan},
organization = {Ministry of Science and Technology, Taiwan, under Grants NSTC 111-2218-
E-A49-021},
organization = {NSTC 111-2634-F-A49-008},
organization = {NSTC 111-2221-E-A49 -173 -MY3},
organization = {NSTC 112-2622-8-A49
-013 –SB},
publisher = {MDPI},
keywords = {AlGaN/GaN HEMTs},
keywords = {Etched-fin gate structure},
keywords = {Ka band},
keywords = {Linearity},
keywords = {SiC substrate},
title = {Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications},
doi = {10.3390/mi14050931},
author = {Lee, Ming-Wen and Gámiz Pérez, Francisco Jesús},
}