@misc{10481/83836,
year = {2023},
month = {6},
url = {https://hdl.handle.net/10481/83836},
abstract = {The recent discovery of two-dimensional (2D) magnetic materials has opened new frontiers for the design of nanoscale spintronic devices. Among 2D nano-magnets, bilayer CrI3 outstands for its antiferromagnetic interlayer coupling and its electrically-mediated magnetic state control. Here, leveraging on CrI3 magnetic and electrical properties, we propose a lateral spin-valve transistor based on bilayer CrI3, where the spin transport is fully controlled via an external electric field. The proposed proof-of-concept device, working in the ballistic regime, is able to both filter (>99%) and select ON/OFF the spin current up to a ratio of & AP;10(2), using a double split-gate architecture. Our results obtained exploiting a multiscale approach ranging from first-principles to out-of-equilibrium transport calculations, open unexplored paths towards the exploitation of bilayer CrI3 or related 2D nano-magnets, as a promising platform for future electrically tunable, compact, and scalable spintronic devices.},
organization = {Ministry of Education, Universities and Research (MIUR)
	881603},
publisher = {Springer Nature},
title = {Electrically tunable lateral spin-valve transistor based on bilayer CrI3},
doi = {10.1038/s41699-023-00400-5},
author = {Marian, Damiano and Soriano, David and Cannavó, Emmanuele and González Marín, Enrique and Fiori, Gianluca},
}