@misc{10481/83818,
year = {2023},
month = {6},
url = {https://hdl.handle.net/10481/83818},
abstract = {Spatial confinement is important in advanced More Moore devices, such as nanowire transistors
(NWTs), where the basic charge transport properties must be revised beyond the bulk crystal
assumptions. This work presents a comprehensive and general overview of the electron mobility in
aggressively-scaled SiNWTs in order to demonstrate the effect of quantum confinement on this topic,
establishing its dependence on numerous physical factors (shape, diameter, and orientation). The
mobility evaluation makes use of a unique simulation framework and innovative multi-subband
calculations of the scattering rates.Weshow that (1) the effect of surface roughness scattering is more
pronounced at higher sheet densities, (2) ionized impurity scattering seriously degrades the mobility
in highly-doped NWTs, and (3) the cross-section shape affects directly the subband parameters and
the mobility, with the ellipticalNWTsgiving the best performance for the same cross-sectional area.},
organization = {European Unionʼs Horizon 2020 research
and innovation programme under grant agreement No 688 101 SUPERAID7},
organization = {Incorporación Fellowship scheme under grant agreement No. IJC2019-040003-I (MICINN/AEI)},
publisher = {IOP Science},
title = {Comprehensive mobility study of silicon nanowire transistors using multi-subband models},
doi = {10.1088/2632-959X/acdb8a},
author = {Medina Bailón, Cristina},
}