@misc{10481/82748,
year = {2023},
month = {4},
url = {https://hdl.handle.net/10481/82748},
abstract = {characterized using both current and voltage sweeps, with the device resistance and its cycle-to-cycle variability
being analysed in each case. Experimental measurements indicate a clear improvement on resistance states
stability when using current sweeps to induce both set and reset processes. Moreover, it has been found that
using current to induce these transitions is more efficient than using voltage sweeps, as seen when analysing the
device power consumption. The same results are obtained for devices with a Ni top electrode and a bilayer or
pentalayer of HfO2/Al2O3 as dielectric. Finally, kinetic Monte Carlo and compact modelling simulation studies
are performed to shed light on the experimental results},
organization = {Consejería de Conocimiento,
Investigaci´on y Universidad, Junta de Andalucía (Spain)},
organization = {FEDER
program for the project B-TIC-624-UGR20},
organization = {Spanish Consejo
Superior de Investigaciones Científicas (CSIC) for the intramural
project 20225AT012},
organization = {Ramón y Cajal
grant No. RYC2020-030150-I.},
publisher = {Elsevier},
keywords = {Resistive switching},
keywords = {Hafnium oxide},
keywords = {Current control},
keywords = {Electrical characterization},
keywords = {TCM},
keywords = {RRAM},
title = {Variability and power enhancement of current controlled resistive switching devices},
doi = {10.1016/j.mee.2023.112008},
author = {Vinuesa, G and Aguilera Pedregosa, Cristina and Moreno, E. and Jiménez Molinos, Francisco and Roldán Aranda, Juan Bautista},
}