@misc{10481/81740,
year = {2023},
month = {3},
url = {https://hdl.handle.net/10481/81740},
abstract = {A methodology to estimate the device temperature in resistive random access memories
(RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects
in their resistive switching operation, are employed to develop the technique. A 3D RRAM simulator
is used to fit experimental data and obtain the maximum and average temperatures of the conductive
filaments (CFs) that are responsible for the switching behavior. It is found that the experimental
CFs temperature corresponds to the maximum simulated temperatures obtained at the narrowest
sections of the CFs. These temperature values can be used to improve compact models for circuit
simulation purposes},
organization = {Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain)},
organization = {FEDER  B-TIC-624-UGR20. M.B.G},
organization = {Ramón y Cajal RYC2020-030150-I},
publisher = {MDPI},
keywords = {Resistive switching memory},
keywords = {RRAM},
keywords = {Temperature characterization},
keywords = {Simulation},
keywords = {Variability},
keywords = {Modeling},
keywords = {Kinetic Monte Carlo},
keywords = {Series resistance},
title = {Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories},
doi = {10.3390/mi14030630},
author = {Aguilera Pedregosa, Cristina and Maldonado Correa, David and Jiménez Molinos, Francisco and Roldán Aranda, Juan Bautista},
}