@misc{10481/80798,
year = {2023},
month = {2},
url = {https://hdl.handle.net/10481/80798},
abstract = {The combination of graphene and silicon in hybrid electronic devices has
attracted increasing attention over the last decade. Here, a unique technology
of graphene-on-silicon heterostructures as solution-gated transistors
for bioelectronics applications is presented. The proposed graphene-onsilicon
field-effect transistors (GoSFETs) are fabricated by exploiting various
conformations of channel doping and dimensions. The fabricated devices
demonstrate hybrid behavior with features specific to both graphene and
silicon, which are rationalized via a comprehensive physics-based compact
model which is purposely implemented and validated against measured data.
The developed theory corroborates that the device hybrid behavior can be
explained in terms of two independent silicon and graphene carrier transport
channels, which are, however, strongly electrostatically coupled. Although
GoSFET transconductance and carrier mobility are found to be lower than in
conventional silicon or graphene field-effect transistors, it is observed that the
combination of both materials within the hybrid channel contributes uniquely
to the electrical response. Specifically, it is found that the graphene sheet acts
as a shield for the silicon channel, giving rise to a nonuniform potential distribution
along it, which impacts the transport, especially at the subthreshold
region, due to non-negligible diffusion current.},
organization = {MCIN/AEI	PID2020-116518GB-I00},
organization = {FEDER/Junta de Andalucia-Consejeria de Transformacion Economica, Industria, Conocimiento y Universidades	A-TIC-646-UGR20
B-RNM-375-UGR18
PY20_00633},
organization = {European Commission	825213},
organization = {PAIDI 2020},
organization = {European Social Fund Operational Programme 2014-2020	20804},
organization = {MCIN/AEI/PTA grant	PTA2020-018250-I},
organization = {Projekt DEAL},
publisher = {Wiley},
keywords = {Bioelectronics},
keywords = {Compact modeling},
keywords = {Drift-diffusion modeling},
keywords = {Electrolytegated transistors},
keywords = {Field-effect transistor},
keywords = {Graphene},
keywords = {Graphene-on-silicon},
keywords = {Hybrid},
keywords = {Silicon},
title = {Graphene-on-Silicon Hybrid Field-Effect Transistors},
doi = {10.1002/aelm.202201083},
author = {Fomin, Mykola and Pasadas Cantos, Francisco and González Marín, Enrique and Medina Rull, Alberto and García Ruiz, Francisco Javier and Godoy Medina, Andrés},
}