@misc{10481/75684,
year = {2022},
month = {4},
url = {http://hdl.handle.net/10481/75684},
abstract = {In this work, the electrical performance of a novel reprogrammable FDSOI device with dual-doping at source/
drain and only two top gates is investigated through advanced 3D TCAD simulations. The static and dynamic
operations are evaluated and compared with those of traditional Schottky barrier RFETs and standard 28 nm
FDSOI MOS transistors under manufacturable geometries.},
organization = {Universidad de Granada/CBUA	PID2020-119668GB-I00
EU MSCA 895322 TRAPS2D
TEC2017 89800R},
publisher = {Elsevier},
keywords = {Reconfigurable},
keywords = {Reprogrammable},
keywords = {Schottky},
keywords = {Barrier},
keywords = {FET},
keywords = {RFET},
title = {Performance of FDSOI double-gate dual-doped reconfigurable FETs},
doi = {10.1016/j.sse.2022.108336},
author = {Navarro Moral, Carlos and Donetti, Luca and Padilla De la Torre, José Luis and Medina Bailón, Cristina and Ávila Gómez, Jorge Pablo and Galdón Gil, José Carlos and Recio Muñoz, María Isabel and Márquez González, Carlos and Sampedro Matarín, Carlos and Gámiz Pérez, Francisco Jesús},
}