@misc{10481/74734,
year = {2022},
month = {2},
url = {http://hdl.handle.net/10481/74734},
abstract = {The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with
gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for
the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the
silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also
be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation
annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps
(STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the
fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation,
but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio
(GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading
after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.},
organization = {European Commission	857558},
organization = {Ministry of Education, Science & Technological Development, Serbia	43011},
publisher = {Elsevier},
keywords = {pMOS radiation dosimeter},
keywords = {RADFETs},
keywords = {Irradiation},
keywords = {Sensitivity},
keywords = {Annealing},
keywords = {Fading},
title = {Sensitivity and fading of irradiated RADFETs with different gate voltages},
doi = {10.1016/j.nima.2022.166473},
author = {Ristic, Goran S. and Palma López, Alberto José and Lalena, Antonio M.},
}