@misc{10481/74514,
year = {2022},
month = {3},
url = {http://hdl.handle.net/10481/74514},
abstract = {As an attempt to improve the description of the tunneling current that arises in ultrascaled
nanoelectronic devices when charge carriers succeed in traversing the potential barrier between
source and drain, an alternative and more accurate non-local formulation of the tunneling probability
was suggested. This improvement of the probability computation might result of particular interest
in the context of Monte Carlo simulations where the utilization of the conventional Wentzel-Kramers-Brillouin (WKB) approximation tends to overestimate the number of particles experiencing this type
of direct tunneling. However, in light of the reformulated expression for the tunneling probability, it
becomes of paramount importance to assess the type of potentials for which it behaves adequately.
We demonstrate that, for ensuring boundedness, the top of the potential barrier cannot feature a
plateau, but rather has to behave quadratically as one approaches its maximum. Moreover, we show
that monotonicity of the reformulated tunneling probability is not guaranteed by boundedness and
requires an additional constraint regarding the derivative of the prefactor that modifies the traditional
WKB tunneling probability},
organization = {Juan de la Cierva Incorporación

IJC2019-040003-I},
organization = {Ministerio de Ciencia e Innovación

MCIN/AEI/10.13039/501100011033, PID2020-119668GB-I00},
publisher = {MDPI},
keywords = {Direct source-to-drain tunneling},
keywords = {Tunneling probability},
keywords = {Multi-Subband Ensemble Monte Carlo},
title = {Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator},
doi = {10.3390/mi13040533},
author = {Padilla De la Torre, José Luis and Medina Bailón, Cristina and Palomares Bautista, Antonio Francisco and Donetti, Luca and Navarro Moral, Carlos and Sampedro Matarín, Carlos and Gámiz Pérez, Francisco Jesús},
}