@misc{10481/74498,
year = {2022},
month = {3},
url = {http://hdl.handle.net/10481/74498},
abstract = {The possibility of using commercial p-channel power vertical double-diffused metal-oxidesemiconductor
field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study.
In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three
X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence
of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray
energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass
energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption
coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon
are used. The behavior of irradiated transistors during annealing at room temperature without gate
polarization is also considered.},
organization = {European Commission	857558},
organization = {Ministry of Education, Science & Technological Development, Serbia	43011},
publisher = {MDPI},
keywords = {VDMOSFETs},
keywords = {X-ray},
keywords = {Irradiation},
keywords = {Sensitivity},
keywords = {Fading},
title = {Commercial P-Channel Power VDMOSFET as X-ray Dosimeter},
doi = {10.3390/electronics11060918},
author = {Ristic, Goran S. and Palma López, Alberto José},
}