@misc{10481/72475,
year = {2021},
month = {10},
url = {http://hdl.handle.net/10481/72475},
abstract = {We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose
rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter
was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant
dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings
after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten
irradiation cycles, giving the promising potential in the application for dosimetric purposes.},
organization = {Ministry of Education, Science & Technological Development, Serbia	43011	
451-03-9/2021-14/200026},
organization = {European Commission	857558-ELICSIR},
publisher = {Elsevier},
keywords = {Floating gate},
keywords = {Radiation sensor},
keywords = {EPAD},
keywords = {Recharging},
keywords = {Programming cell},
keywords = {Non-volatile memory},
title = {Recharging process of commercial floating-gate MOS transistor in dosimetry application},
doi = {10.1016/j.microrel.2021.114322},
author = {Ilic, Stefan D. and Palma López, Alberto José},
}