@misc{10481/69772,
year = {2021},
month = {6},
url = {http://hdl.handle.net/10481/69772},
abstract = {We investigated the influence of gamma radiation of 50 Gy(H2O) on radiation-sensitive
p-channel metal-oxide-semiconductor field-effect transistors with an Al gate (RADFETs) with
gate oxide thicknesses of 400 and 1000 nm and gate voltages of 0 and 5 V. The obtained results
showed that the sensitivity S at a given gate voltage increases with the square of the gate oxide
thickness. After irradiation (IR), spontaneous annealing (SA) was performed at room
temperature without voltage at the gate. We present the behaviors of fixed traps and switching
traps, determined by the midgap technique, and that of fast switching traps, determined by the
charge-pumping technique, during IR and SA. A very important characteristic of dosimetric
transistors is fading, which represents the recovery of the threshold voltage of the irradiated
RADFETs during SA. The maximum fading is about 15% after 9100 h, except for the RADFETs
with a gate oxide thickness of 1000 nm and a gate voltage of 5 V, for which it is about 30%. A
fitting equation for fading was proposed, which fitted the experimental fading values very well.},
organization = {European Union's Horizon 2020 research and innovation programme	857558},
organization = {Ministry of Education, Science & Technological Development, Serbia	43011},
publisher = {MYU},
keywords = {RADFETs},
keywords = {Radiation dosimeters},
keywords = {Radiation},
keywords = {Annealing},
keywords = {Fading},
title = {Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm},
doi = {10.18494/SAM.2021.3425},
author = {Ristic, Goran S. and Andjelkovic, Marko S. and Duane, Russell and Palma López, Alberto José and Jakšić, Aleksandar B.},
}