@misc{10481/69443,
year = {2019},
month = {1},
url = {http://hdl.handle.net/10481/69443},
abstract = {Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, therefore advanced device simulators need to include them in an appropriate way. This work presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLM) accounting for both direct and trap assisted tunneling, and non-local band–to–band tunneling (BTBT) phenomena in a Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled FDSOI, DGSOI, and FinFET devices. We find that S/D tunneling is the prevalent phenomena for the three devices, and it is increasingly relevant for short channel lengths.},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
keywords = {direct Source-to-Drain tunneling},
keywords = {gate leakage current},
keywords = {band-to-band tunneling},
keywords = {Multi-Subband Ensemble Monte Carlo},
keywords = {FDSOI},
keywords = {DGSOI},
keywords = {FinFET},
title = {Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices},
doi = {10.1109/TED.2019.2890985},
author = {Medina Bailón, Cristina and Padilla De la Torre, José Luis and Sadi, Toufik and Sampedro Matarín, Carlos and Godoy Medina, Andrés and Donetti, Luca and Georgiev, Vihar and Gámiz Pérez, Francisco Jesús and Asenov, Asen},
}