@misc{10481/65890,
year = {2020},
url = {http://hdl.handle.net/10481/65890},
abstract = {In this paper, we present a new method to mitigate the effect of the charge collected by trigate
FinFET devices after an ionizing particle impact. The method is based on the creation of an internal structure
that generates an electrical field that drives the charge generated by the ion track out of the sensitive device
terminals. This electrical field is generated with the insertion of complementary doped regions near the active
region of the device. We analyze the influence of the distance of those regions to the device, their depth into
the substrate and their doping concentration to determine the optimal implementation which minimizes the
collected charge. The impact on the device performance in terms of leakage current, threshold voltage,
maximum transconductance and subthreshold voltage swing has also been investigated. Our results show that
the added structures introduce negligible effects in performance degradation and total leakage current, at the
cost of a small increase in area. The simulations performed with technology computer-aided design numerical
(TCAD) tools in 22nm bulk FinFET technology show that the amount of charge collected by the device
terminals can be reduced up to 50% for a linear energy transfer (LET) of 60 MeV-cm2/mg.},
organization = {Spanish Ministry of Economy (MINECO)},
organization = {European Union (EU)

TEC2016-75151-C3-R},
publisher = {IEEE Inst Electrical Electronics Engineers Inc},
keywords = {Charge collection},
keywords = {Single event cross section,},
keywords = {Radiation hardening},
keywords = {Soft error},
keywords = {Single event transient (SET)},
keywords = {Single event upset (SEU)},
keywords = {FinFET},
keywords = {3D TCAD modeling},
title = {Active radiation-hardening strategy in Bulk FinFETs},
doi = {10.1109/ACCESS.2020.3035974},
author = {Calomarde, Antonio and Moll, Francesc and Gámiz Pérez, Francisco Jesús},
}