@misc{10481/58061,
year = {2019},
url = {http://hdl.handle.net/10481/58061},
abstract = {Organic thin- lm transistors (OTFTs) have attracted considerable research interest because of the
bene ts associated to their constituent materials, such as 
exibility, low fabrication costs and weight, and
their potential applications in large-area, 
exible electronics, such as displays and sensors. Nevertheless,
they also have important limitations, for example a low carrier mobility compared to inorganic TFTs,
high process variability, or degraded performance characteristics due to contact effects. Contact effects,
speci cally, have been extensively studied in order to introduce them in transistor compact models.
For the purpose of obtaining the values of these models, parameter extraction procedures are normally
applied to the device output characteristics. It has to be noted that the parameter extraction is a
complex procedure when contact effects are present, since the device I - V characteristics are affected
by them. This work focuses on developing an efficient procedure to extract the parameters of an OTFT
compact model, in which contact effects are taken into account. This compact model is valid for all the
operation regimes of the transistors.},
organization = {Tesis Univ. Granada.},
publisher = {Universidad de Granada},
keywords = {Informática},
keywords = {Modelos compactos},
keywords = {Transistores delgados},
title = {Extracción evolutiva de parámetros en modelos compactos de transistores orgánicos de lámina delgada},
author = {Romero Cáceres, Adrián},
}