@misc{10481/58016,
year = {2018},
url = {http://hdl.handle.net/10481/58016},
abstract = {Resistive switching (RS) is an interesting property shown by some materials
systems that, especially during the last decade, has gained a lot of interest for the
fabrication of electronic devices, being electronic non-volatile memories those that have
received most attention. The presence and quality of the RS phenomenon in a materials
system can be studied using different prototype cells, performing different experiments,
displaying different figures of merit, and developing different computational analyses.
Therefore, the real usefulness and impact of the findings presented in each study for the
RS technology will be also different. In this manuscript we describe the most
recommendable methodologies for the fabrication, characterization and simulation of
RS devices, as well as the proper methods to display the data obtained. The idea is to
help the scientific community to evaluate the real usefulness and impact of an RS study
for the development of RS technology.},
organization = {This work has been supported by the Young 1000 Global Talent Recruitment
Program of the Ministry of Education of China, the National Natural Science
Foundation of China (grants no. 61502326, 41550110223, 11661131002), the Jiangsu
Government (grant no. BK20150343), and the Ministry of Finance of China (grant no.
SX21400213).},
publisher = {Wiley},
keywords = {Resistive switching},
keywords = {Resistive random access memories},
keywords = {Electronic synapse},
keywords = {Nanofabrication},
keywords = {Electrical characterization},
title = {Recommended Methods to Study Resistive Switching Devices},
doi = {10.1002/aelm.201800143},
author = {Lanza, Mario and Roldán Aranda, Juan Bautista},
}