@misc{10481/55899,
year = {2018},
url = {http://hdl.handle.net/10481/55899},
abstract = {Electron–Hole Bilayer Tunneling Field-Effect Transistors are typically based on band-to-band
tunneling processes between two layers of opposite charge carriers where tunneling directions and
gate-induced electric fields are mostly aligned (so-called line tunneling). However, the presence of
intense electric fields associated with the band bending required to trigger interband tunneling,
along with strong confinement effects, has made these types of devices to be regarded as theoretically
appealing but technologically impracticable. In this work, we propose an InAs/GaSb heterostructure
configuration that, although challenging in terms of process flow design and fabrication,
could be envisaged for alleviating the electric fields inside the channel, whereas, at the same time,
making quantum confinement become the mechanism that closes the broken gap allowing the device
to switch between OFF and ON states. The utilization of induced doping prevents the harmful effect
of band tails on the device performance. Simulation results lead to extremely steep slope characteristics
endorsing its potential interest for ultralow power applications. Published by AIP Publishing.},
publisher = {American Institute of Physics},
title = {Confinement-induced InAs/GaSb heterojunction electron–hole bilayer tunneling fieldeffect transistor},
author = {Padilla De la Torre, José Luis and Medina Bailón, Cristina and Alper, C and Gámiz Pérez, Francisco Jesús and Ionescu, Adrian Mihai},
}