@misc{10481/43553,
year = {2016},
url = {http://hdl.handle.net/10481/43553},
abstract = {The aim of the work herein presented in this thesis is to deepen the
simulation study of devices based of new injection mechanisms, which
are currently regarded as potentially interesting to replace conventional
MOSFETs and overcome their fundamental subthreshold swing limitation
of 60mV/dec. The physical impossibility of breaking this limit
fosters most of the ongoing research precisely in the direction of exploring
novel devices such as those considered in this work: the Tunneling
Field–Effect Transistors (TFETs) and the Schottky Barrier MOSFETs
(SB–MOSFETs).},
organization = {Tesis Univ. Granada. Departamento de Electrónica y Tecnología de Computadores},
publisher = {Universidad de Granada},
keywords = {Transistores MOSFET},
keywords = {Nanoelectrónica},
keywords = {Métodos de simulación},
keywords = {Tunnel FETs},
keywords = {Emisión termoiónica},
keywords = {Transductores},
keywords = {ATLAS simulator},
title = {Study and Simulation of Advanced Si–based Nanodevices: Schottky–Barrier MOSFETs and Tunnel FETs},
author = {Padilla De la Torre, José Luis},
}