@misc{10481/32936, year = {2012}, month = {5}, url = {http://hdl.handle.net/10481/32936}, abstract = {In this work, a simulation-based study of the gate capacitance of III-V nanowires is performed by using a 2D Schrödinger-Poisson solver. The effective mass approximation, including non-parabolic corrections, is used to model the semiconductor conduction band. Also,wave-function penetration into the gate dielectric is considered. We assess the impact of parameters such as the gate-insulator effective mass and the satellite conduction band valleys energy offsets.}, organization = {Work supported by the projects P09-TIC-4873, FIS-2008-05805 and FIS-2011-26005. E. González Marín also acknowledges the FPU program.}, keywords = {III-V compound semiconductors}, keywords = {Non-parabolic relationship}, keywords = {Nanowire}, keywords = {Density of states}, keywords = {Gate capacitance}, title = {Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires}, author = {González Marín, Enrique and García Ruiz, Francisco Javier and Tienda-Luna, Isabel María and Godoy Medina, Andrés and Gámiz Pérez, Francisco Jesús}, }