@misc{10481/110243,
year = {2025},
url = {https://hdl.handle.net/10481/110243},
abstract = {The capacitance of the gate oxide is a crucial parameter to model the performance of MOSFETs. The traditional expression used to compute it stems from the parallel-plate capacitor formula. While its use is appropriate for planar devices, it has been naturally  extended to 3-D devices such as those based on nanosheets even if the geometry is quite different. In this work, we compute numerically the gate oxide capacitance of nanosheet transistors and, observing a nonnegligible discrepancy with the planar model, we propose a simple model that better reproduces the computed capacitance. Then, we investigate the definition of equivalent oxide thickness (EOT), showing that it cannot be strictly used for nonplanar devices: however, our improved model allows us to obtain a useful expression valid for the most common cases. Finally, we generalize the capacitance model to nanosheets with rounded corners.},
keywords = {Equivalent oxide thickness (EOT)},
keywords = {gate insulator capacitance},
keywords = {gate-all-around (GAA)},
keywords = {MOSFET},
keywords = {nanosheet MOSFET},
title = {On the Capacitance of Nanosheet Transistors},
doi = {10.1109/TED.2025.3559482},
author = {Donetti, Luca and Medina Bailón, Cristina and Padilla De la Torre, José Luis and Sampedro Matarín, Carlos and Gámiz Pérez, Francisco Jesús},
}