@misc{10481/106633,
year = {2025},
month = {12},
url = {https://hdl.handle.net/10481/106633},
abstract = {In this work, we present Mulhacen, a 3D multi-subband simulator developed for the accurate study of nonplanar
devices which are at the core of present and future technology nodes. It allows to consider electrons in different
conduction band valleys and, among its main features, we can highlight the accurate evaluation of quantum
effects in the plane transverse to transport through the solution of the 2D Schrödinger equation in several
device cross sections, as well as Monte Carlo description of transport. The simulator is based on a finite
elements discretization, which allows an accurate description of realistic device geometries.},
organization = {Ministerio de Transformación Digital (Project. +QCHIP TSI069100-2023-0003)},
organization = {European Chips Joint Undertaking (HORIZON-JU-Chips-2023-RIA-CPL-2; FAMES ID 101182279)},
organization = {Universidad de Granada / CBUA (Open access)},
publisher = {Elsevier},
keywords = {Monte Carlo},
keywords = {Multi-subband},
keywords = {2D Schrödinger},
title = {MULHACEN, enhanced multi-subband Monte Carlo simulator for nonplanar FETs},
doi = {10.1016/j.sse.2025.109213},
author = {Donetti, Luca and Medina Bailón, Cristina and Padilla, José Luis and Sampedro Matarín, Carlos and Gámiz Pérez, Francisco Jesús},
}