@misc{10481/104123,
year = {2025},
month = {5},
url = {https://hdl.handle.net/10481/104123},
abstract = {The conductance drift in HfO2-based memristors is a critical reliability concern that impacts in their application
in non-volatile memory and neuromorphic computing integrated circuits. In this work we present a comprehensive
statistical analysis of the conductance drift behavior in resistive random access memories (RRAM) whose
physics is based on valence change mechanisms. We experimentally characterize the conductance time evolution
in six different resistance states and analyze the suitability of various probability distributions to model the
observed variability. Our results reveal that the log-logistic probability distribution provides the best fit to the
experimental data for the resistance multilevels and the measured post-programming times under consideration.
Additionally, we employ an analysis of variance (ANOVA) to statistically analyze the post-programming time and
current level effects on the observed variability. Finally, in the context of the Stanford compact model, we
describe how variability has to be implemented to obtain the probability distribution of measured current values.},
organization = {German Research Foundation (DFG)  546680029},
organization = {MCIN/AEI/10.13039/501100011033 PID2022-139586NB-C44 and PID2023-149087NB-I00},
organization = {FEDER, EU},
organization = {"María de Maeztu” CEX2020-001105-M},
publisher = {Elsevier},
title = {A comprehensive statistical study of the post-programming conductance drift in HfO2-based memristive devices},
doi = {10.1016/j.mssp.2025.109668},
author = {Maldonado Correa, David and Acal González, Christian José and Ortiz Alcalá, Helena and Aguilera Del Pino, Ana María and Ruiz Castro, Juan Eloy and Cantudo Gómez, Antonio Manuel and Roldán Aranda, Juan Bautista},
}