@misc{10481/103501,
year = {2025},
month = {2},
url = {https://hdl.handle.net/10481/103501},
abstract = {Two-dimensional Transition Metal Dichalcogenide-based van der Waals heterostructures have
been proposed for avant-garde, highly scalable optoelectronic and excitonic devices. Although ab initio
techniques have been thoroughly employed to analyze these confined systems from a microscopic
perspective, a robust mesoscopic description for device-scale simulation is still lacking. In this work,
we account for the recent reports on the role of interlayer excitons and the band alignment in van der
Waals-based optoelectronic devices, developing an extended van Roosbroeck system within the framework
of the Drift-Diffusion approximation. Ultrafast interlayer charge transfer of photo-generated carriers is
incorporated effectively, as is interlayer recombination. This description succeeds in reproducing selected
experimental measurements of a van der Waals-based gated-diode, providing a comprehensive physical
description of the involved magnitudes.},
organization = {Research project CNS2023-143727 RECAMBIO funded by MCIN/AEI/10.13039/501100011033},
organization = {European Union NextGenerationEU/PRTR},
organization = {Research projects PID2023-150162OB-I00 and TED2021-129769B-I00 FlexPowHar funded by MCIN/AEI/10.13039/501100011033},
organization = {P21_00149 ENERGHENE funded by Consejería de Universidad, Investigación e Innovación de la Junta de Andalucía},
organization = {R+D+i project A-ING-253-UGR23 AMBITIONS co-financed by Consejería de Universidad, Investigación e Innovación},
organization = {European Union under the FEDER Andalucía 2021-2027},
publisher = {IEEE},
keywords = {Device simulation},
keywords = {2D materials},
keywords = {Van der Waals heterostructures},
title = {Modeling of van der Waals-Based Photovoltaic Devices},
doi = {10.1109/JEDS.2025.3542168},
author = {Díaz Burgos, Ángel Alonso and González Marín, Enrique and Pasadas Cantos, Francisco and García Ruiz, Francisco Javier and Godoy Medina, Andrés},
}