@misc{10481/101585,
year = {2020},
month = {4},
url = {https://hdl.handle.net/10481/101585},
abstract = {Tools for numerical simulation of transmission electron microscopy (TEM) images are frequently used to provide insight about the origin of contrast features, hence,
to understand and to measure correctly the properties of a material. We describe in this work a methodology for simulating the compositional-strain contrast of TEM
images of large nanocrystalline heterostructures. The methodology combines finite element calculations and a generalized form of the single slice approach that takes
into account also the imaging conditions. It is simple and computationally efficient and as an example of its reliability we compare experimental and simulated
images of a sample of self-assembled In(Ga)As/GaAs QDs.},
organization = {Ministerio de Ciencia, Innovación y Universidades/ Agencia Estatal de Investigación (MCIU/AEI) of Spain PGC2018-101538-A-I00},
organization = {Spanish Ministry of Economy and Competitiveness (TEC2017-86102-C2-2-R)},
organization = {FEDER Andalusian Operative Program  SOL-201800106586-TRA},
organization = {Acceso al Sistema Español de Ciencia y Tecnología (ASECTI)},
publisher = {Elsevier},
title = {Simulation of transmission electron microscopy images using a generalized single-slice approach: The case of self-assembled quantum dots},
doi = {10.1016/j.matchar.2020.110312},
author = {Cervera Gontard, Lionel and Pizarro, Joaquín and Ruiz-Zafra, Ángel and Hernández-Saz, Jesús},
}