@misc{10481/100443,
year = {2019},
url = {https://hdl.handle.net/10481/100443},
abstract = {This paper addresses the low-frequency noise characterization of Z2-FET structures. These double-gated p-i-n diode devices have been fabricated at STMicroelectronics in an ultrathin body and box (UTBB) 28-nm FDSOI technology and designed to operate as 1T-DRAM memory cells, although other applications, as for example electro static discharge (ESD) protection, have been reported. The experimentally extracted power spectral density of current reveals that the high-diode series resistance, carrier number fluctuations due to oxide traps, and gate leakage current are the main noise contributors at high-current regimes. These mechanisms are expected to contribute to the degradation of cell variability and retention time. Higher flicker noise levels have been reported when increasing the vertical electric field. A simple model considering the contribution of the main noise sources is proposed.},
organization = {The work of C. Marquez was supported in part by Jose Castillejo CAS18/00460 Grant.},
title = {On the Low-Frequency Noise Characterization of Z2-FET Devices},
doi = {10.1109/ACCESS.2019.2907062},
author = {Marquez, Carlos and Navarro Moral, Carlos and Navarro, Santiago and Padilla De la Torre, José Luis and Donetti, Luca and Galy, P and Kim, Y-T and Gamiz, Francisco},
}