TY  - JOUR 
AU  - Lee, Ming-Wen
AU  - Chuang, Cheng-Wei
AU  - Gámiz Pérez, Francisco Jesús
AU  - Chang, Edward Yi
AU  - Lin, Yueh-Chin
PY  - 2023
UR  - https://hdl.handle.net/10481/91186
AB  - In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching
patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band
applications” are reported. The fabricated AlGaN/GaN HEMTs with OEP...
LA  - eng
PB  - MDPI
KW  - Aluminum gallium nitride
KW  - Etching
KW  - HEMTs
TI  - Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications
DO  - 10.3390/mi15010081
ER  -