Assessment of Frequency-induced Hysteresis Inversion in MoS2 FETs Cuesta-Lopez, Juan Ganeriwala, Mohit D. González Marín, Enrique Pasadas, Francisco Ruiz, Fran G. Godoy, Andres This work analyzes the combined effect of interface traps and mobile ions in the hysteretic performance of MoS2-based FETs. Clockwise or anti-clockwise hysteresis is observed depending on the voltage sweep rate, evidencing the different underlying physical mechanism associated with the charge/discharge of interface traps and ion displacement. The memory window resulting from the device hysteresis is analyzed as a function of the operating frequency showing non-zero values for 0.1 < f < 10 Hz (i.e. for the characteristic time of traps) and f > 10kHz (i.e the frequency-limited ion mobility). Both regions are separated by a frequency span where hysteresis is not present in the device response. The presented results constitute a first step towards a better understanding of the hysteretic behavior of iontronic devices and its potential application as analog memories. 2024-04-23T10:25:57Z 2024-04-23T10:25:57Z 2024 info:eu-repo/semantics/conferenceObject https://hdl.handle.net/10481/91080 eng http://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License