Impact of non uniform strain configuration on transport properties for FD14+ devices Medina Bailón, Cristina Sampedro Matarín, Carlos Gámiz Pérez, Francisco Jesús Godoy Medina, Andrés Donetti, Luca Non uniform strain FD14+ devices Multi-Subband Ensemble Monte Carlo As device dimensions are scaled down, the use of non-geometrical performance boosters becomes of special relevance. In this sense, strained channels are proposed for the 14 nm FDSOI node. However this option may introduce a new source of variability since strain distribution inside the channel is not uniform at such scales. In this work, a MS-EMC study of different strain configurations including non-uniformities is presented showing drain current degradation because of the increase of intervalley phonon scattering and the subsequent variations of transport effective mass and drift velocity. This effect, which has an intrinsic statistical origin, will make necessary further optimizations to keep the expected boosting capabilities of strained channels. 2021-06-30T10:18:21Z 2021-06-30T10:18:21Z 2015-09 info:eu-repo/semantics/article Medina-Bailon, C., Sampedro, C., Gamiz, F., Godoy, A., & Donetti, L. (2016). Impact of non uniform strain configuration on transport properties for FD14+ devices. Solid-State Electronics, 115, 232-236. http://hdl.handle.net/10481/69444 10.1016/j.sse.2015.08.013 eng http://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License Elsevier