Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states
Identificadores
URI: https://hdl.handle.net/10481/91438Metadatos
Mostrar el registro completo del ítemAutor
Jiménez Molinos, Francisco; Vinuesa, G; García, H.; Dueñas, S.; Castán, H.; González, M. B.; Campabadal, F.; Roldán Aranda, Juan BautistaEditorial
Elsevier
Fecha
2024-05-04Referencia bibliográfica
F. Jiménez-Molinos et al. Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states. Materials Science in Semiconductor Processing 179 (2024) 108480. https://doi.org/10.1016/j.mssp.2024.108480
Patrocinador
MICIU/AEI/10.13039/501100011033: PID2022-139586NB-C42, PID2022-139586NB-C43, PID2022-139586NB-C44, RYC2020-030150-I; FEDER, UE; CSIC 20225AT012; Generalitat de Catalunya- AGAUR 2021 SGR 00497; “ESF Investing in your future”Resumen
The dependence of the current in TiN/Ti/HfO2/W devices on the temperature is investigated in the range from 78 K to 340 K. Resistive switching cycles at 78 K are
conducted to explore the thermal dependence in filament configurations with different intermediate resistance states. The less conductive states show an increase of
the current as the temperature rises, while the fully formed filament displays a metallic-like behavior. A comprehensive model, based on the Stanford Model
including a series resistance, is proposed and successfully validated by experimental data. The interplay between the ohmic and non-linear components in the model
for different filament states is analyzed, emphasizing the dominance of the non-linear component (and its corresponding thermal dependence) in partially formed
filaments and the prevalence of the ohmic component in the fully formed filament, which shows a decreasing current as the temperature rises. A complete compact
model for simulation of circuits including the thermal dependence of these devices is developed.