Development of a multisubband Monte Carlo simualtor for nanometric transistors
Metadatos
Mostrar el registro completo del ítemAutor
Medina Bailón, CristinaEditorial
Universidad de Granada
Departamento
Universidad de Granada. Departamento de Electrónica y Tecnología de los ComputadoresMateria
Nanotecnología Transistores MOSFET Método de Montecarlo Modelos matemáticos Simuladores
Materia UDC
53 2500
Fecha
2016-02-02Fecha lectura
2017-02-02Referencia bibliográfica
Medina Bailón, C. Development of a multisubband Monte Carlo simualtor for nanometric transistors. Granada: Universidad de Granada, 2016. [http://hdl.handle.net/10481/44885]
Patrocinador
Tesis Univ. Granada. Programa Oficial de Doctorado en: Física y Ciencias del Espacio; Ministerio de Economía, Industria y Competitividad (TEC2011-28660)Resumen
The ultimate objective of this PhD Thesis is the study of the performance
of nanometric transistors, and the importance that quantum effects have on the
determination of their behavior. To do so, this work presents a description of the
new architectures which are postulated as an alternative for future technological
nodes, and the simulation tools employed to achieve an accurate determination
of the electrostatic and transport properties of such devices, accounting for the
dominant quantum effects which they undergo.
We start with a summary of several technological architectures which are
proposed to overcome the downscaling limitations of conventional planar devices.
They are required to keep under control the short-channel effects (SCEs), that
is, the loss of the control of the channel charge by the gate terminal.
The starting point of the simulation frame which is a Multisubband Ensemble
Monte Carlo (MS-EMC) scheme is analyzed. This tool is based on the mode-space
approach of quantum transport where the system is decoupled in the confinement
direction and the transport plane, where the 1D Schrödinger equation and the
2D Boltzmann Transport Equation (BTE) are solved, respectively. Both equations
are coupled to the 2D Poisson Equation to keep the self-consistency of the
solution. It has already demonstrated its capabilities in different scenarios keeping
a reasonable computational effort with respect to the full-quantum approach.
However, this code has been parallelized in order to allow for the study of more
complex devices in a reasonable simulation time. Other techniques for statistical
enhancement are included in order to reduce the stochastic noise.
Furthermore, the appearance of the leakage currents modifies the stable performance
of the conventional MOSFETs. Accordingly, a deep study of each
physical mechanisms responsible for these leakage currents was carried out. One
of the main advantages of considering this MS-EMC simulator is that quantum
effects can be included in a separate way because of the decoupled approximation
allowing for an independent inquiry.