@misc{10481/91186,
year = {2023},
month = {12},
url = {https://hdl.handle.net/10481/91186},
abstract = {In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching
patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band
applications” are reported. The fabricated AlGaN/GaN HEMTs with OEP structures were used to
reduce the source and drain resistances (Rs and Rd) for RF performance improvements. Within the
proposed study using 1 μm hole, 3 μm hole, 1 μm line, and 3 μm line OEP HEMTs with 2 × 25 μm
gate widths, the small signal performance, large signal performance, and minimum noise figure
(NFmin) with optimized values were measured for 1 μm line OEP HEMTs. The cut-off frequency (fT)
and maximum oscillation frequency (fmax) value of the 1 μm line OEP device exhibited optimized
values of 36.4 GHz and 158.29 GHz, respectively. The load–pull results show that the 1 μm line OEP
HEMTs exhibited an optimized maximum output power density (Pout, max) of 1.94 W/mm at 28 GHz.
The 1 μm line OEP HEMTs also exhibited an optimized NFmin of 1.75 dB at 28 GHz. The increase
in the contact area between the ohmic metal and the AlGaN barrier layer was used to reduce the
contact resistance of the OEP HEMTs, and the results show that the 1 μm line OEP HEMT could be
fabricated, producing the best improvement in RF performance for Ka-band applications.},
organization = {National Science and Technology
Council, Taiwan (project number: NSTC 111-2218-E-A49-018, NSTC 111-2634-F-A49-008, NSTC
111-2221-E-A49-173-MY3, and NSTC 112-2622-8-A49-013–SB)},
organization = {Co-creation Platform of the
Industry-Academia Innovation School, NYCU, under the framework of the National Key Fields
Industry-University Cooperation and Skilled Personnel Training Act, from the Ministry of Education
(MOE), the National Development Fund (NDF), and industry partners in Taiwan},
publisher = {MDPI},
keywords = {Aluminum gallium nitride},
keywords = {Etching},
keywords = {HEMTs},
title = {Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications},
doi = {10.3390/mi15010081},
author = {Lee, Ming-Wen and Chuang, Cheng-Wei and Gámiz Pérez, Francisco Jesús and Chang, Edward Yi and Lin, Yueh-Chin},
}