@misc{10481/91080,
year = {2024},
url = {https://hdl.handle.net/10481/91080},
abstract = {This work analyzes the combined effect of interface traps and mobile ions in the hysteretic performance of
MoS2-based FETs. Clockwise or anti-clockwise hysteresis is
observed depending on the voltage sweep rate, evidencing the
different underlying physical mechanism associated with the
charge/discharge of interface traps and ion displacement. The
memory window resulting from the device hysteresis is analyzed
as a function of the operating frequency showing non-zero values
for 0.1 < f < 10 Hz (i.e. for the characteristic time of traps)
and f > 10kHz (i.e the frequency-limited ion mobility). Both
regions are separated by a frequency span where hysteresis is not
present in the device response. The presented results constitute
a first step towards a better understanding of the hysteretic
behavior of iontronic devices and its potential application as
analog memories.},
title = {Assessment of Frequency-induced Hysteresis Inversion in MoS2 FETs},
author = {Cuesta-Lopez, Juan and Ganeriwala, Mohit D. and González Marín, Enrique and Pasadas, Francisco and Ruiz, Fran G. and Godoy, Andres},
}