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Performance and reliability in back-gated CVD-grown MoS2 devices

dc.contributor.authorMárquez González, Carlos 
dc.contributor.authorSalazar, Norberto
dc.contributor.authorGity, Farzan
dc.contributor.authorGaldón, José Carlos
dc.contributor.authorNavarro Moral, Carlos 
dc.contributor.authorDuffy, Ray
dc.contributor.authorHurley, Paul
dc.contributor.authorGamiz, Francisco Jesús
dc.date.accessioned2021-09-01T07:39:57Z
dc.date.available2021-09-01T07:39:57Z
dc.date.issued2021-08-19
dc.identifier.citationMarquez, C., Salazar, N., Gity, F., Galdon, J.C., Navarro, C., Duffy, R., Hurley, P.,Gamiz, F., Performance and reliability in back-gated CVD-grown MoS2 devices, Solid-State Electronics (2021)es_ES
dc.identifier.urihttp://hdl.handle.net/10481/70021
dc.description.abstractIn this work, the electrical performance and reliability of as-synthesized CVD-grown MoS2 transistors directly grown on SiO2/Si substrate without any transfer process have been evaluated. Transfer and output characteristics, current hysteresis, capacitancevoltage and low-frequency noise signatures have been characterized revealing the huge influence of surface and oxide defects and the disturbance due to the fluctuations of the carrier number on the back-gated transistor response.es_ES
dc.description.sponsorshipEuropean Union’sHorizon 2020 research and innovation programme under theMarie Skłodowska-Curie grant agreement No 895322es_ES
dc.description.sponsorshipSpanish Government under Juan de la Cierva Formacion grantnumber FJC2018-038264-Ies_ES
dc.description.sponsorshipThe Spanish Program (TEC2017-89800-R)es_ES
dc.description.sponsorshipASCENT (EU Horizon 2020 GRANT 654384)es_ES
dc.description.sponsorshipScience Foundation Ireland: INVEST (SFI-15/IA/3131)es_ES
dc.description.sponsorshipScience Foundation Ireland: AMBER (12/RC/2278-P2)es_ES
dc.language.isoenges_ES
dc.publisherELSEVIERes_ES
dc.rightsAtribución-NoComercial 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc/3.0/es/*
dc.subjectTransition Metal Dichalcogenidees_ES
dc.subjectMolybdenum Disulfidees_ES
dc.subjectTwo-Dimensional Materialses_ES
dc.subjectMore than Moorees_ES
dc.subjectLow-frequency noisees_ES
dc.subjectReliabilityes_ES
dc.titlePerformance and reliability in back-gated CVD-grown MoS2 deviceses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.doi10.1016/j.sse.2021.108173
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES


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