Universidad de Granada Digibug
 

Repositorio Institucional de la Universidad de Granada >
1.-Investigación >
Departamentos, Grupos de Investigación e Institutos >
Grupo: Nanoelectrónica (TIC216) >
TIC216 - Artículos >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10481/47952

Title: Extended analysis of the Z2-FET: Operation as capacitor-less eDRAM
Authors: Navarro Moral, Carlos
Lacord, Joris
Parihar, Mukta Singh
Adamu-Lema, Fikru
Duan, Meng
Rodríguez Santiago, Noel
Cheng, Binjie
El Dirani, Hassam
Barbe, Jean-Charles
Fonteneau, Pascal
Bawedin, Maryline
Millar, Campbell
Galy, Philippe
Le Royer, Cyrille
Karg, Sigfried
Wells, Paul
Kim, Yong Tae
Asenov, Asen
Cristoloveanu, Sorin
Gámiz Pérez, Francisco
Issue Date: 1-Nov-2017
Abstract: The Z2-FET operation as capacitorless DRAM is analyzed using advanced 2-D TCAD simulations for IoT applications. The simulated architecture is built based on actual 28-nm fully depleted silicon-on-insulator devices. It is found that the triggering mechanism is dominated by the front-gate bias and the carrier’s diffusion length. As in other FB-DRAMs, the memory window is defined by the ON voltage shift with the stored body charge. However, the Z2-FET’s memory state is not exclusively defined by the inner charge but also by the reading conditions.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Description: This article has been accepted for publication by IEEE "Navarro Moral, C.; et al. Extended analysis of the Z2-FET: Operation as capacitor-less eDRAM. IEEE Transactions on Electron Devices, 64(11): 4486-4491 (2017). DOI: 10.1109/TED.2017.2751141
(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works."
Keywords: Semiconductor memories
Low-power
T-Dram
Capacitorless
Feedback effect
Fully depleted (FD)
Ground plane
Lifetime
Sharp switch
Silicon-on-insulator
Z2-FET
URI: http://hdl.handle.net/10481/47952
ISSN: 0018-9383
Rights : Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License
Citation: Navarro Moral, C.; et al. Extended analysis of the Z2-FET: Operation as capacitor-less eDRAM. IEEE Transactions on Electron Devices, 64(11): 4486-4491 (2017). [http://hdl.handle.net/10481/47952]
Appears in Collections:OpenAIRE (Open Access Infrastructure for Research in Europe)
TIC216 - Artículos

Files in This Item:

File Description SizeFormat
NavarroMoral_PostPrint_Z2FETfinal.pdf1.82 MBAdobe PDFView/Open
Recommend this item

This item is licensed under a Creative Commons License
Creative Commons

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! OpenAire compliant DSpace Software Copyright © 2002-2007 MIT and Hewlett-Packard - Feedback

© Universidad de Granada