Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching Based Memristors
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AutorPicos, Rodrigo; Roldán Aranda, Juan Bautista; Al Chawa, Mohamed Moner; García Fernández, Pedro; Jiménez Molinos, Francisco; García-Moreno, Eugeni
Brno University of Technology. Faculty of Electrical Engineering and Communication
RRAMMemristor modelingReset voltage (Vrst) determinationVariability
Picos, R.; et al. Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching Based Memristors. Radioengineering, 24(2): 420-424 (2015). [http://hdl.handle.net/10481/36994]
PatrocinadorWe thank Francesca Campabadal and Mireia Bargalló from the IMB-CNM (CSIC) in Barcelona for fabricating and providing the experimental measurements of the devices employed in this manuscript. We also acknowledge the European COST Action MemoCIS IC1401, and the Spanish “Red de Excelencia” Nanovar. Part of this work was funded under the “Programa Pont La Caixa-UIB 2014”, and under the Spanish Ministry of Economy and Competitiveness, Projects TEC2013-40677-P, TEC2014-52152-C3-2-R, and TEC2014-56244-R, and under the Junta de Andalucía, project FQM.1861.
We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2/Si-n+ structures, and have also developed an analytical model for their electrical characteristics. When the characteristic curves are plotted in the current-voltage (I-V) domain a high variability is observed. In spite of that, when the same curves are plotted in the charge-flux domain (Q-ᶲ), they can be described by a simple model containing only three parameters: the charge (Qrst) and the flux (ᶲrst) at the reset point, and an exponent, n, relating the charge and the flux before the reset transition. The three parameters can be easily extracted from the Q-ᶲ plots. There is a strong correlation between these three parameters, the origin of which is still under study.