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Please use this identifier to cite or link to this item: http://hdl.handle.net/10481/32936

Title: Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires
Authors: González-Marín, Enrique
García Ruiz, Francisco Javier
Tienda-Luna, Isabel María
Godoy Medina, Andrés
Gámiz Pérez, Francisco
Issue Date: May-2012
Abstract: In this work, a simulation-based study of the gate capacitance of III-V nanowires is performed by using a 2D Schrödinger-Poisson solver. The effective mass approximation, including non-parabolic corrections, is used to model the semiconductor conduction band. Also,wave-function penetration into the gate dielectric is considered. We assess the impact of parameters such as the gate-insulator effective mass and the satellite conduction band valleys energy offsets.
Sponsorship: Work supported by the projects P09-TIC-4873, FIS-2008-05805 and FIS-2011-26005. E. González Marín also acknowledges the FPU program.
Keywords: III-V compound semiconductors
Non-parabolic relationship
Density of states
Gate capacitance
URI: http://hdl.handle.net/10481/32936
Citation: González-Marín, E.; et al. Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires. In: 36 th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012). Island of Porquerolles (France), 28-30 may 2012. [http://hdl.handle.net/10481/32936]
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