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Please use this identifier to cite or link to this item: http://hdl.handle.net/10481/32935

Title: Spatial Dependence of the Phonon-Limited Mobility in Arbitrarily Oriented Si-Nanowires
Authors: Tienda-Luna, Isabel María
García Ruiz, Francisco Javier
Godoy Medina, Andrés
González-Marín, Enrique
Gámiz Pérez, Francisco
Issue Date: May-2012
Abstract: The study of the transport properties of Si-Nanowires (NWs) is a research field of high interest. The spatial dependence of the low-field mobility and, in particular, the role of the corners is still not clear. Only recently, Lee et al. have considered their impact on the mobility through the development of a Spatial Dependent Mobility (SDM) expression. In this work, we extend their approach to study the phonon-limited mobility (μph ) of arbitrarily oriented square NWs.
Sponsorship: Work supported by the projects P09-TIC-4873, FIS-2008-05805 and FIS-2011-26005. E. González Marín also acknowledges the FPU program.
Keywords: Mobility
Nanowire
Phonon
Silicon
URI: http://hdl.handle.net/10481/32935
Citation: Tienda-Luna, I.M.; et al. Spatial Dependence of the Phonon-Limited Mobility in Arbitrarily Oriented Si-Nanowires. In: 15th International Workshop on Computational Electronics (IWCE 2012). University of Winsconsin (Madison, USA), may 22-25, 2012. [http://hdl.handle.net/10481/32935]
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